FDN358P
The FDN358P is a single P-channel, logic level PowerTrench® MOSFET designed for low on-state resistance and superior switching performance. ...
描述
The FDN358P is a single P-channel, logic level MOSFET produced using an advanced PowerTrench process. It features a drain-source voltage of -30V and a continuous drain current of -1.5A. This device is tailored to minimize on-state resistance, with an RDS(ON) of 125 mΩ at a gate-source voltage of -10V and 200 mΩ at -4.5V. It also maintains a low typical gate charge of 4 nC for superior switching performance, all within a SuperSOT-3 package. The FDN358P is well-suited for portable electronics applications such as load switching, power management, battery charging circuits, and DC/DC conversion.
搜索关键词: FDN358P
规格
常见问题
FDN358P 是否符合 RoHS 标准?
是的,FDN358P 符合 RoHS 标准。
FDN358P 的交货期是多少?
FDN358P 的标准交货期约为 15 周。有库存的数量由 Master Electronics 发货。
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