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FDS6675BZ
The FDS6675BZ is a P-Channel PowerTrench® MOSFET with a drain-to-source voltage of -30V and a continuous drain current of -11A. ...
描述
The FDS6675BZ is a P-Channel MOSFET manufactured using an advanced PowerTrench® process to minimize on-state resistance. This device features a maximum on-state resistance (rDS(on)) of 13 mΩ at a gate-source voltage of -10V and a continuous drain current of -11A. It supports a drain-to-source voltage of -30V, an extended gate-to-source voltage range of ±25V, and a pulsed drain current up to -55A. Due to its high power and current handling capabilities, the FDS6675BZ is well-suited for power management and load switching applications, particularly in notebook computers and portable battery packs.
搜索关键词: FDS6675BZ
规格
常见问题
FDS6675BZ 是否符合 RoHS 标准？
是的，FDS6675BZ 符合 RoHS 标准。
FDS6675BZ 的交货期是多少？
FDS6675BZ 的标准交货期约为 17 天。有库存的数量由 Master Electronics 发货。
有存货: 6,900
可立即发货
最小订购数量: 100
工厂交货期 17 周
数据表
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