BIDW20N60T by bourns
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BIDW20N60T

IGBT Discrete 600V - 20A - TO-247 - -55°C to +150°C ...

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符合 RoHS
TUBE 包装
附件
请求编程报价
合规证书

描述

BIDW20N60T is an N-channel Insulated Gate Bipolar Transistor (IGBT) that combines MOS gate and bipolar transistor technology for high voltage and high current applications. It features advanced trench-gate field-stop technology providing a collector-emitter voltage of 600 V, continuous collector current of 20 A, and low collector-emitter saturation voltage (VCE(sat)) of 1.7 V typical at 25°C. The device offers total power dissipation of 192 W, low switching losses with turn-on energy of 1 mJ and turn-off energy of 0.3 mJ, and operates over a junction temperature range of -55°C to +150°C. Common applications include switch-mode power supplies (SMPS), uninterruptible power sources (UPS), power factor correction (PFC), and stepper motor drives where optimized conduction and low switching losses are essential.

搜索关键词: BIDW20N60T

规格

产品属性
属性值
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找到的产品: 0
供应商:
Bourns
部件编号:
BIDW20N60T
计量单位:
每 Each
RoHS:
Yes
HTS:
8541290095
COO:
CN
ECCN:
EAR99
供应商标准包装: 供应商原始包装中所含物品的数量、长度、重量或体积，以便高效存储、搬运和配送。
600
封装类型:
TUBE

常见问题

BIDW20N60T 是否符合 RoHS 标准？

是的，BIDW20N60T 符合 RoHS 标准。

BIDW20N60T 的交货期是多少？

BIDW20N60T 的标准交货期约为 16 周。有库存的数量由 Master Electronics 发货。

有存货: 4,195

可立即发货

库存数量的起订量: 69

缺货数量的起订量: 69

工厂交货期 16 周

价格 (USD)

数量
单价
69
$4.37
250
$4.36
500
$4.35
750
$4.34
1,500
$2.30
2,250
$1.61
3,000 +
$1.58
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