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MMBT5089LT1G by onsemi
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MMBT5089LT1G

NPN Bipolar Transistor ...

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RoHS Compliant
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DESCRIPTION

The ONSEMI MMBT5089LT1G is a high-performance NPN bipolar junction transistor (BJT) renowned for its excellent gain characteristics and robust performance in a compact package. Ideal for a wide range of electronic applications, this transistor is designed to amplify or switch electronic signals with efficiency and reliability. It features a maximum collector current of 100mA and a collector-emitter voltage of 30V, making it suitable for a variety of low to medium current and voltage applications. The MMBT5089LT1G is housed in a space-saving SOT-23 package, which makes it perfect for modern electronic designs that require efficient use of board space. It is widely used in amplification circuits, switching applications, and in the creation of oscillators and multivibrators. With ONSEMI's commitment to quality and performance, this transistor ensures consistent results across different use cases.

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SPECIFICATIONS

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Products found: 0
Supplier:
onsemi
Part No:
MMBT5089LT1G
Unit of Measure:
Per Each
RoHS:
Yes
HTS:
8541210095
COO:
JP
ECCN:
EAR99
Supplier Standard Pack: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
3000
Family:
MMBT5089L
Dimension:
2.9 x 1.3 x 0.94 mm
Maximum Collector Base Voltage:
30 V

FREQUENTLY ASKED QUESTIONS

Is MMBT5089LT1G RoHS compliant?

Yes, MMBT5089LT1G is RoHS compliant.

What is the lead time for MMBT5089LT1G?

The standard lead time for MMBT5089LT1G is approximately 52 weeks. In-stock quantities ship from Master Electronics.

IN STOCK: 621,000

Can Ship immediately

Minimum Order Quantity: 3000

Multiple: 3000

Factory Lead-Time 52 Weeks

Price (USD)

Qty
Unit Price
3,000
$0.0287
9,000
$0.0276
27,000
$0.0266
51,000
$0.0260
102,000
$0.0259
150,000
$0.0259
252,000
$0.0258
501,000 +
$0.0257

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