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FDS89161LZ
The FDS89161LZ is a dual N-Channel Shielded Gate PowerTrench® MOSFET rated for 100 V, 2.7 A, and a maximum on-resistance of 105 mΩ. ...
描述
The FDS89161LZ is a dual N-Channel logic level MOSFET produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This device features a maximum on-state resistance (rDS(on)) of 105 mΩ at a gate-source voltage (VGS) of 10 V and 160 mΩ at a VGS of 4.5 V. It is rated for a drain-to-source voltage of 100 V and a continuous drain current of 2.7 A. The process is optimized to provide extremely low on-resistance while maintaining superior switching performance, and a G-S zener is included to enhance ESD protection. Due to its high power and current handling capabilities, it is well-suited for DC-DC conversion applications.
搜索关键词: FDS89161LZ
规格
常见问题
FDS89161LZ 是否符合 RoHS 标准？
是的，FDS89161LZ 符合 RoHS 标准。
FDS89161LZ 的交货期是多少？
FDS89161LZ 的标准交货期约为 79 周。有库存的数量由 Master Electronics 发货。
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