MMBT5089LT1G
NPN Bipolar Transistor ...
BESCHRIJVING
The ONSEMI MMBT5089LT1G is a high-performance NPN bipolar junction transistor (BJT) renowned for its excellent gain characteristics and robust performance in a compact package. Ideal for a wide range of electronic applications, this transistor is designed to amplify or switch electronic signals with efficiency and reliability. It features a maximum collector current of 100mA and a collector-emitter voltage of 30V, making it suitable for a variety of low to medium current and voltage applications. The MMBT5089LT1G is housed in a space-saving SOT-23 package, which makes it perfect for modern electronic designs that require efficient use of board space. It is widely used in amplification circuits, switching applications, and in the creation of oscillators and multivibrators. With ONSEMI's commitment to quality and performance, this transistor ensures consistent results across different use cases.
Zoekwoorden: MMBT5089LT1G
SPECIFICATIES
VEELGESTELDE VRAGEN
Is MMBT5089LT1G RoHS-conform?
Ja, MMBT5089LT1G is RoHS-conform.
Wat is de levertijd voor MMBT5089LT1G?
De standaard levertijd voor MMBT5089LT1G is ongeveer 52 weken. Voorraadhoeveelheden worden verzonden vanuit Master Electronics.
OP VOORRAAD: 621.000
Kan direct verzenden
Minimale bestelhoeveelheid: 3000
Meerdere: 3000
Fabriekslevertijd 52 Weken
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