MJD112-1G
The MJD112-1G is an NPN Darlington power transistor designed for general-purpose power and switching applications. ...
BESCHRIJVING
The MJD112-1G is an NPN silicon Darlington power transistor intended for general-purpose power and switching tasks. This device is rated for a collector-emitter voltage of 100 V and a continuous collector current of 2 A, with a peak current rating of 4 A. It features a high DC current gain and can dissipate up to 20 W at a case temperature of 25°C. Housed in a DPAK-3 package with straight leads, it is suitable for use as an output or driver stage in applications such as switching regulators, converters, and power amplifiers.
Zoekwoorden: MJD1121G
SPECIFICATIES
VEELGESTELDE VRAGEN
Is MJD112-1G RoHS-conform?
Nee, MJD112-1G is niet RoHS-conform.
Wat is de levertijd voor MJD112-1G?
De standaard levertijd voor MJD112-1G is ongeveer 29 dagen. Voorraadhoeveelheden worden verzonden vanuit Master Electronics.
OP VOORRAAD: 42.150
Kan direct verzenden
Minimale bestelhoeveelheid: 75
Meerdere: 75
Fabriekslevertijd 29 Weken
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