H11G2SR2M
The H11G2SR2M is a high-voltage, photodarlington-type optically coupled optocoupler designed for electrical isolation and high sensitivity. ...
BESCHRIJVING
The H11G2SR2M is a photodarlington-type optocoupler, which integrates a gallium arsenide infrared emitting diode with a silicon darlington phototransistor. It features a high collector-emitter breakdown voltage of at least 80V and offers high sensitivity with a minimum current transfer ratio (CTR) of 500% at a low input current of 1mA. This device maintains low leakage current, not exceeding 100µA at 60V and an elevated temperature of 80°C, and has a maximum saturation voltage of 1.0V. It is well-suited for applications such as CMOS logic interfacing, telephone ring detection, low input TTL interfacing, and power supply isolation.
Zoekwoorden: H11G2SR2M
SPECIFICATIES
VEELGESTELDE VRAGEN
Is H11G2SR2M RoHS-conform?
Ja, H11G2SR2M is RoHS-conform.
Wat is de levertijd voor H11G2SR2M?
De standaard levertijd voor H11G2SR2M is ongeveer 24 weken. Voorraadhoeveelheden worden verzonden vanuit Master Electronics.
OP VOORRAAD: 1.850
Kan direct verzenden
In bestelling:
7.000
kan verzenden 1-8-27
Minimale bestelhoeveelheid: 50
Fabriekslevertijd 24 Weken
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