FQB12P20TM
The FQB12P20TM is a -200V P-Channel enhancement mode MOSFET designed for high-efficiency switching applications. ...
BESCHRIJVING
The FQB12P20TM is a P-Channel enhancement mode power MOSFET produced using a proprietary planar stripe, DMOS technology. It is characterized by a drain-source voltage of -200V, a continuous drain current of -11.5A, and a low on-state resistance of 0.47Ω at a -10V gate-source voltage. This device offers superior switching performance with a low typical gate charge of 31 nC and a low reverse transfer capacitance of 30 pF. It is 100% avalanche tested and features improved dv/dt capability for robust operation. These characteristics make the FQB12P20TM well-suited for high-efficiency switching DC/DC converters.
Zoekwoorden: FQB12P20TM
SPECIFICATIES
VEELGESTELDE VRAGEN
Is FQB12P20TM RoHS-conform?
Nee, FQB12P20TM is niet RoHS-conform.
Wat is de levertijd voor FQB12P20TM?
De standaard levertijd voor FQB12P20TM is ongeveer 11 dagen. Voorraadhoeveelheden worden verzonden vanuit Master Electronics.
OP VOORRAAD: 1.890
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