APT50GN60BDQ3G
The APT50GN60BDQ3G is a 600V Field Stop Trench Gate IGBT designed for low-frequency applications requiring minimal conduction loss. ...
BESCHRIJVING
The APT50GN60BDQ3G is a 600V Insulated Gate Bipolar Transistor (IGBT) that utilizes advanced Field Stop and Trench Gate technologies for ultra-low VCE(ON). It features a continuous collector current of 107A at 25°C, a total power dissipation of 366W, and is rated for a maximum junction temperature of 175°C. The device offers a 6µs short circuit capability, while low gate charge and tight parameter distribution simplify gate drive design and enable easy paralleling. Its characteristics make it ideal for low-frequency power applications such as welding, inductive heating, solar inverters, motor drives, and uninterruptible power supplies (UPS).
Zoekwoorden: APT50GN60BDQ3G
SPECIFICATIES
VEELGESTELDE VRAGEN
Is APT50GN60BDQ3G RoHS-conform?
Ja, APT50GN60BDQ3G is RoHS-conform.
Wat is de levertijd voor APT50GN60BDQ3G?
De standaard levertijd voor APT50GN60BDQ3G is ongeveer 26 dagen. Voorraadhoeveelheden worden verzonden vanuit Master Electronics.
OP VOORRAAD: 0
Minimale bestelhoeveelheid: 5
Fabriekslevertijd 26 Weken
English
中文 / 汉语
Deutsch
Español
Nederlands
