BIDW30N60T
IGBT Discrete 600V - 30A - TO-247 - -55°C to +150°C ...
BESCHRIJVING
BIDW30N60T is an N-channel Insulated Gate Bipolar Transistor (IGBT) that combines MOS gate and bipolar transistor technology for high voltage and high current applications. It features advanced trench-gate field-stop technology providing low collector-emitter saturation voltage (VCE(sat) typ. 1.65 V at 30 A) and reduced switching losses. The device offers a collector-emitter voltage rating of 600 V, continuous collector current of 30 A at 100°C, and total power dissipation of 230 W. With fast switching characteristics including turn-on delay time of 30 ns and turn-off delay time of 67 ns, it is well-suited for switch-mode power supplies (SMPS), uninterruptible power sources (UPS), power factor correction (PFC), and induction heating applications.
Zoekwoorden: BIDW30N60T
SPECIFICATIES
VEELGESTELDE VRAGEN
Is BIDW30N60T RoHS-conform?
Ja, BIDW30N60T is RoHS-conform.
Wat is de levertijd voor BIDW30N60T?
De standaard levertijd voor BIDW30N60T is ongeveer 16 weken. Voorraadhoeveelheden worden verzonden vanuit Master Electronics.
OP VOORRAAD: 2.199
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Minimale bestelhoeveelheid: 56
Fabriekslevertijd 16 Weken
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