BIDW20N60T
IGBT Discrete 600V - 20A - TO-247 - -55°C to +150°C ...
BESCHRIJVING
BIDW20N60T is an N-channel Insulated Gate Bipolar Transistor (IGBT) that combines MOS gate and bipolar transistor technology for high voltage and high current applications. It features advanced trench-gate field-stop technology providing a collector-emitter voltage of 600 V, continuous collector current of 20 A, and low collector-emitter saturation voltage (VCE(sat)) of 1.7 V typical at 25°C. The device offers total power dissipation of 192 W, low switching losses with turn-on energy of 1 mJ and turn-off energy of 0.3 mJ, and operates over a junction temperature range of -55°C to +150°C. Common applications include switch-mode power supplies (SMPS), uninterruptible power sources (UPS), power factor correction (PFC), and stepper motor drives where optimized conduction and low switching losses are essential.
Zoekwoorden: BIDW20N60T
SPECIFICATIES
VEELGESTELDE VRAGEN
Is BIDW20N60T RoHS-conform?
Ja, BIDW20N60T is RoHS-conform.
Wat is de levertijd voor BIDW20N60T?
De standaard levertijd voor BIDW20N60T is ongeveer 16 dagen. Voorraadhoeveelheden worden verzonden vanuit Master Electronics.
OP VOORRAAD: 4.195
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MOQ voor voorraadhoeveelheid: 69
MOQ voor niet-voorraadhoeveelheid: 69
Fabriekslevertijd 16 Weken
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