NTJD5121NT1G
A dual N-Channel power MOSFET with ESD protection, rated for 60 V and 295 mA in a SC-88 package. ...
BESCHRIJVING
The NTJD5121NT1G is a dual N-Channel power MOSFET featuring integrated ESD protection in a compact SC-88 surface-mount package. This device is characterized by a drain-to-source voltage of 60 V and a continuous drain current of 295 mA at an ambient temperature of 25°C. It offers low on-resistance, with a maximum RDS(on) of 1.6 Ω at a 10 V gate-source voltage and 2.5 Ω at 4.5 V. Key features include a low gate threshold voltage, low input capacitance, and a gate-source ESD rating of 2000 V (HBM). These characteristics make the NTJD5121NT1G suitable for applications such as low-side load switches and DC-DC converters.
Zoekwoorden: NTJD5121NT1G
SPECIFICATIES
VEELGESTELDE VRAGEN
Is NTJD5121NT1G RoHS-conform?
Ja, NTJD5121NT1G is RoHS-conform.
Wat is de levertijd voor NTJD5121NT1G?
De standaard levertijd voor NTJD5121NT1G is ongeveer 42 dagen. Voorraadhoeveelheden worden verzonden vanuit Master Electronics.
OP VOORRAAD: 150.000
Verzending today, als u bestelt in
Minimale bestelhoeveelheid: 3000
Meerdere: 3000
Fabriekslevertijd 42 Weken
Prijs (USD)
Productgidsen
English
中文 / 汉语
Deutsch
Español
Nederlands
