NDS331N
The NDS331N is an N-Channel logic level enhancement mode Field Effect Transistor (FET) featuring a 20V drain-source voltage and 1.3A continuous drain current. ...
BESCHRIJVING
The NDS331N is an N-Channel logic level enhancement mode power FET designed with high-density DMOS technology to minimize on-state resistance. It operates with a drain-source voltage of 20V, a continuous gate-source voltage of 8V, and handles a continuous drain current of 1.3A. Key features include a low on-state resistance (RDS(ON)) of 0.16 Ω at VGS=4.5V and 0.21 Ω at VGS=2.7V. Housed in a SOT-23 surface-mount package, this transistor is ideal for low-voltage applications such as notebook computers, portable phones, and other battery-powered circuits requiring fast switching and low power loss.
Zoekwoorden: NDS331N
SPECIFICATIES
VEELGESTELDE VRAGEN
Is NDS331N RoHS-conform?
Ja, NDS331N is RoHS-conform.
Wat is de levertijd voor NDS331N?
De standaard levertijd voor NDS331N is ongeveer 16 weken. Voorraadhoeveelheden worden verzonden vanuit Master Electronics.
OP VOORRAAD: 75.422
Kan direct verzenden
Minimale bestelhoeveelheid: 3000
Meerdere: 3000
Fabriekslevertijd 16 Weken
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