HGTD1N120BNS9A
Trans IGBT Chip N=-CH 1200V 5.3A 60000mW 3-Pin(2+Tab) DPAK T/R ...
BESCHRIJVING
The ONSEMI HGTD1N120BNS9A is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed to deliver exceptional efficiency in a wide range of demanding applications. Featuring a robust 1200V blocking voltage and a low collector-to-emitter saturation voltage, this IGBT is optimized for high-speed switching, making it ideal for use in inverters, motor drives, and power supply systems. The device comes in a TO-263 package, offering excellent thermal performance and ease of integration into compact designs. With its rugged construction and reliable performance, the HGTD1N120BNS9A delivers superior power handling and reliability, ensuring your system operates smoothly under a variety of conditions. Whether you're developing consumer electronics, industrial equipment, or automotive solutions, this IGBT provides the necessary capabilities to enhance your product's performance and efficiency.
Zoekwoorden: HGTD1N120BNS9A
SPECIFICATIES
VEELGESTELDE VRAGEN
Is HGTD1N120BNS9A RoHS-conform?
Nee, HGTD1N120BNS9A is niet RoHS-conform.
Wat is de levertijd voor HGTD1N120BNS9A?
De standaard levertijd voor HGTD1N120BNS9A is ongeveer 17 weken. Voorraadhoeveelheden worden verzonden vanuit Master Electronics.
OP VOORRAAD: 2.500
Kan direct verzenden
Minimale bestelhoeveelheid: 50
Fabriekslevertijd 17 Weken
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