FDT86113LZ
The FDT86113LZ is an N-Channel PowerTrench® MOSFET rated for 100V drain-to-source voltage and 3.3A continuous drain current. ...
BESCHRIJVING
The FDT86113LZ is an N-Channel logic-level MOSFET produced using an advanced PowerTrench® process to minimize on-state resistance while maintaining superior switching performance. This device features a maximum on-resistance (rDS(on)) of 100 mΩ at a VGS of 10V and is rated for a drain-to-source voltage of 100V with a continuous drain current of 3.3A. It incorporates a Gate-to-Source zener diode for enhanced ESD protection and is 100% UIL tested. Housed in a surface-mount SOT-223 package, this MOSFET is optimized for high power and current handling, making it ideal for DC-DC switching applications.
Zoekwoorden: FDT86113LZ
SPECIFICATIES
VEELGESTELDE VRAGEN
Is FDT86113LZ RoHS-conform?
Nee, FDT86113LZ is niet RoHS-conform.
Wat is de levertijd voor FDT86113LZ?
De standaard levertijd voor FDT86113LZ is ongeveer 19 dagen. Voorraadhoeveelheden worden verzonden vanuit Master Electronics.
OP VOORRAAD: 17.945
Verzending today, als u bestelt in
In bestelling:
8.000
kan verzenden 10-7-26
Minimale bestelhoeveelheid: 50
Fabriekslevertijd 19 Weken
Prijs (USD)
English
中文 / 汉语
Deutsch
Español
Nederlands
