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FDS89161LZ
The FDS89161LZ is a dual N-Channel Shielded Gate PowerTrench® MOSFET rated for 100 V, 2.7 A, and a maximum on-resistance of 105 mΩ. ...
BESCHRIJVING
The FDS89161LZ is a dual N-Channel logic level MOSFET produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This device features a maximum on-state resistance (rDS(on)) of 105 mΩ at a gate-source voltage (VGS) of 10 V and 160 mΩ at a VGS of 4.5 V. It is rated for a drain-to-source voltage of 100 V and a continuous drain current of 2.7 A. The process is optimized to provide extremely low on-resistance while maintaining superior switching performance, and a G-S zener is included to enhance ESD protection. Due to its high power and current handling capabilities, it is well-suited for DC-DC conversion applications.
Zoekwoorden: FDS89161LZ
SPECIFICATIES
VEELGESTELDE VRAGEN
Is FDS89161LZ RoHS-conform?
Ja, FDS89161LZ is RoHS-conform.
Wat is de levertijd voor FDS89161LZ?
De standaard levertijd voor FDS89161LZ is ongeveer 79 weken. Voorraadhoeveelheden worden verzonden vanuit Master Electronics.
OP VOORRAAD: 1.500
Verzending today, als u bestelt in
In bestelling:
2.500
kan verzenden 3-27-28
Minimale bestelhoeveelheid: 50
Fabriekslevertijd 79 Weken
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