FDS6675BZ
The FDS6675BZ is a P-Channel PowerTrench® MOSFET with a drain-to-source voltage of -30V and a continuous drain current of -11A. ...
BESCHRIJVING
The FDS6675BZ is a P-Channel MOSFET manufactured using an advanced PowerTrench® process to minimize on-state resistance. This device features a maximum on-state resistance (rDS(on)) of 13 mΩ at a gate-source voltage of -10V and a continuous drain current of -11A. It supports a drain-to-source voltage of -30V, an extended gate-to-source voltage range of ±25V, and a pulsed drain current up to -55A. Due to its high power and current handling capabilities, the FDS6675BZ is well-suited for power management and load switching applications, particularly in notebook computers and portable battery packs.
Zoekwoorden: FDS6675BZ
SPECIFICATIES
VEELGESTELDE VRAGEN
Is FDS6675BZ RoHS-conform?
Ja, FDS6675BZ is RoHS-conform.
Wat is de levertijd voor FDS6675BZ?
De standaard levertijd voor FDS6675BZ is ongeveer 17 dagen. Voorraadhoeveelheden worden verzonden vanuit Master Electronics.
OP VOORRAAD: 6.900
Kan direct verzenden
Minimale bestelhoeveelheid: 100
Fabriekslevertijd 17 Weken
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