FDMS86200
The FDMS86200 is a 150V N-Channel PowerTrench® MOSFET featuring Shielded Gate technology for high-efficiency applications. ...
BESCHRIJVING
The FDMS86200 is an N-Channel MOSFET produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This device is optimized for low on-state resistance and superior switching performance, featuring a maximum rDS(on) of 18 mΩ at a gate-source voltage of 10V. It has a maximum drain-to-source voltage rating of 150V and can handle a continuous drain current of up to 35A at a case temperature of 25°C. The combination of an advanced package and silicon results in high efficiency, making it well-suited for DC-DC conversion applications.
Zoekwoorden: FDMS86200
SPECIFICATIES
VEELGESTELDE VRAGEN
Is FDMS86200 RoHS-conform?
Nee, FDMS86200 is niet RoHS-conform.
Wat is de levertijd voor FDMS86200?
De standaard levertijd voor FDMS86200 is ongeveer 77 dagen. Voorraadhoeveelheden worden verzonden vanuit Master Electronics.
OP VOORRAAD: 3.340
Verzending today, als u bestelt in
In bestelling:
6.000
kan verzenden 1-5-28
Minimale bestelhoeveelheid: 25
Fabriekslevertijd 77 Weken
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