FDB3632
The FDB3632 is an N-Channel PowerTrench® MOSFET rated for 100 V drain-to-source voltage, 80 A continuous drain current, and 9 mΩ maximum on-resistance. ...
BESCHRIJVING
The FDB3632 is a 100 V N-Channel PowerTrench® MOSFET designed for high-power switching applications. It features a low on-resistance of 7.5 mΩ (typical) at a 10V gate voltage and a total gate charge of 84 nC, enabling efficient operation. This device also offers a low Miller charge, a low Qrr body diode, and is capable of withstanding Unclamped Inductive Switching (UIS) pulses. Its characteristics make it well-suited for applications such as synchronous rectification, motor drives, uninterruptible power supplies, and micro solar inverters.
Zoekwoorden: FDB3632
SPECIFICATIES
VEELGESTELDE VRAGEN
Is FDB3632 RoHS-conform?
Nee, FDB3632 is niet RoHS-conform.
Wat is de levertijd voor FDB3632?
De standaard levertijd voor FDB3632 is ongeveer 72 dagen. Voorraadhoeveelheden worden verzonden vanuit Master Electronics.
OP VOORRAAD: 0
In bestelling:
5.600
kan verzenden 11-5-26
Minimale bestelhoeveelheid: 25
Fabriekslevertijd 72 Weken
Prijs (USD)
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