APT45GP120JDQ2
The APT45GP120JDQ2 is a 1200V Punch-Through technology IGBT designed for high-frequency, high-voltage switching applications. ...
BESCHRIJVING
The APT45GP120JDQ2 is a POWER MOS 7® IGBT that utilizes Punch-Through technology for high-voltage power switching. It is rated for a collector-emitter voltage of 1200V and can handle a continuous collector current of 75A at a case temperature of 25°C, or 34A at 110°C. The device features a total power dissipation of 329W and a robust Reverse Bias Safe Operating Area (RBSOA) of 170A at 960V. With an operating junction temperature range of -55°C to 150°C and features like low conduction loss and ultrafast tail current shutoff, it ensures reliable performance. This IGBT is optimized for use in high-frequency switch-mode power supplies and other demanding switching applications.
Zoekwoorden: APT45GP120JDQ2
SPECIFICATIES
VEELGESTELDE VRAGEN
Is APT45GP120JDQ2 RoHS-conform?
Ja, APT45GP120JDQ2 is RoHS-conform.
Wat is de levertijd voor APT45GP120JDQ2?
De standaard levertijd voor APT45GP120JDQ2 is ongeveer 20 dagen. Voorraadhoeveelheden worden verzonden vanuit Master Electronics.
OP VOORRAAD: 21
Kan direct verzenden
Fabrieksvoorraad: 28 kan verzenden 9-21-26
MOQ voor niet-voorraadhoeveelheid: 5
Fabriekslevertijd 20 Weken kan verzenden 1-25-27
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