MMBT5088LT1G
The MMBT5088LT1G is an NPN silicon transistor designed for low-noise amplification applications. ...
DESCRIPTION
The MMBT5088LT1G is an NPN silicon low noise transistor supplied in a SOT-23 package. It features a collector-emitter breakdown voltage of 30 Vdc and a continuous collector current rating of 50 mAdc. Key performance characteristics include a DC current gain (hFE) between 300 and 900 at 100 µA, a minimum current-gain-bandwidth product of 50 MHz, and a maximum noise figure of 3.0 dB. This Pb-free and RoHS-compliant device is well-suited for use in audio preamplifiers and other sensitive signal processing circuits where low noise is a critical requirement.
Search Keywords: MMBT5088LT1G
SPECIFICATIONS
FREQUENTLY ASKED QUESTIONS
Is MMBT5088LT1G RoHS compliant?
Yes, MMBT5088LT1G is RoHS compliant.
What is the lead time for MMBT5088LT1G?
The standard lead time for MMBT5088LT1G is approximately 52 weeks. In-stock quantities ship from Master Electronics.
IN STOCK: 213,000
Can Ship immediately
Minimum Order Quantity: 3000
Multiple: 3000
Factory Lead-Time 52 Weeks
Price (USD)
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