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HGTD1N120BNS9A
Trans IGBT Chip N=-CH 1200V 5.3A 60000mW 3-Pin(2+Tab) DPAK T/R ...
DESCRIPCIÓN
The ONSEMI HGTD1N120BNS9A is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed to deliver exceptional efficiency in a wide range of demanding applications. Featuring a robust 1200V blocking voltage and a low collector-to-emitter saturation voltage, this IGBT is optimized for high-speed switching, making it ideal for use in inverters, motor drives, and power supply systems. The device comes in a TO-263 package, offering excellent thermal performance and ease of integration into compact designs. With its rugged construction and reliable performance, the HGTD1N120BNS9A delivers superior power handling and reliability, ensuring your system operates smoothly under a variety of conditions. Whether you're developing consumer electronics, industrial equipment, or automotive solutions, this IGBT provides the necessary capabilities to enhance your product's performance and efficiency.
Palabras clave de búsqueda: HGTD1N120BNS9A
ESPECIFICACIONES
PREGUNTAS FRECUENTES
¿Cumple HGTD1N120BNS9A con la normativa RoHS?
No, HGTD1N120BNS9A no cumple con la normativa RoHS.
¿Cuál es el plazo de entrega de HGTD1N120BNS9A?
El plazo de entrega estándar de HGTD1N120BNS9A es de aproximadamente 17 semanas. Las cantidades disponibles se envían desde Master Electronics.
EN STOCK: 2.500
Puede enviar inmediatamente
Cantidad mínima de pedido: 50
Plazo de entrega de fábrica 17 Semanas
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