FDMS86200
The FDMS86200 is a 150V N-Channel PowerTrench® MOSFET featuring Shielded Gate technology for high-efficiency applications. ...
描述
The FDMS86200 is an N-Channel MOSFET produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This device is optimized for low on-state resistance and superior switching performance, featuring a maximum rDS(on) of 18 mΩ at a gate-source voltage of 10V. It has a maximum drain-to-source voltage rating of 150V and can handle a continuous drain current of up to 35A at a case temperature of 25°C. The combination of an advanced package and silicon results in high efficiency, making it well-suited for DC-DC conversion applications.
搜索关键词: FDMS86200
规格
常见问题
FDMS86200 是否符合 RoHS 标准?
不,FDMS86200 不符合 RoHS 标准。
FDMS86200 的交货期是多少?
FDMS86200 的标准交货期约为 77 周。有库存的数量由 Master Electronics 发货。
有存货: 3,340
可立即发货
已订购:
6,000
可以发货 1/5/28
最小订购数量: 25
工厂交货期 77 周
价格 (USD)
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