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BIDW20N60T
IGBT Discrete 600V - 20A - TO-247 - -55°C to +150°C ...
DESCRIPCIÓN
BIDW20N60T is an N-channel Insulated Gate Bipolar Transistor (IGBT) that combines MOS gate and bipolar transistor technology for high voltage and high current applications. It features advanced trench-gate field-stop technology providing a collector-emitter voltage of 600 V, continuous collector current of 20 A, and low collector-emitter saturation voltage (VCE(sat)) of 1.7 V typical at 25°C. The device offers total power dissipation of 192 W, low switching losses with turn-on energy of 1 mJ and turn-off energy of 0.3 mJ, and operates over a junction temperature range of -55°C to +150°C. Common applications include switch-mode power supplies (SMPS), uninterruptible power sources (UPS), power factor correction (PFC), and stepper motor drives where optimized conduction and low switching losses are essential.
Palabras clave de búsqueda: BIDW20N60T
ESPECIFICACIONES
PREGUNTAS FRECUENTES
¿Cumple BIDW20N60T con la normativa RoHS?
Sí, BIDW20N60T cumple con la normativa RoHS.
¿Cuál es el plazo de entrega de BIDW20N60T?
El plazo de entrega estándar de BIDW20N60T es de aproximadamente 16 semanas. Las cantidades disponibles se envían desde Master Electronics.
EN STOCK: 4.195
Puede enviar inmediatamente
MOQ para Cantidad en Stock: 69
MOQ para cantidad agotada: 69
Plazo de entrega de fábrica 16 Semanas
Hoja de datos
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