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描述
BIDNW30N60H3 is a 600 V, 30 A Insulated Gate Bipolar Transistor (IGBT) that combines MOS gate and bipolar transistor technology for optimized high-voltage and high-current switching performance. The device employs advanced trench-gate field-stop technology, which provides superior control of dynamic characteristics, resulting in a low collector-emitter saturation voltage (VCE(sat)) of 1.65 V typical at 30 A and 25°C, and reduced switching losses with fast switching response. Key electrical characteristics include a gate-threshold voltage of 4.0–6.5 V, turn-on delay time of 30 ns, and total switching energy of 2.3 mJ, making it well-suited for demanding applications such as switch-mode power supplies (SMPS), uninterruptible power sources (UPS), power factor correction (PFC), and induction heating systems.
搜索关键词: BIDNW30N60H3
规格
常见问题
BIDNW30N60H3 是否符合 RoHS 标准？
是的，BIDNW30N60H3 符合 RoHS 标准。
BIDNW30N60H3 的交货期是多少？
BIDNW30N60H3 的标准交货期约为 16 天。有库存的数量由 Master Electronics 发货。
有存货: 1,338
可立即发货
库存数量的起订量: 62
缺货数量的起订量: 62
工厂交货期 16 周
数据表
Bourns Profile
Learn more about Bourns® Industrial Automation Solutions with Resistors, Protection Devices and Magnetics