NTJD5121NT1G
A dual N-Channel power MOSFET with ESD protection, rated for 60 V and 295 mA in a SC-88 package. ...
DESCRIPTION
The NTJD5121NT1G is a dual N-Channel power MOSFET featuring integrated ESD protection in a compact SC-88 surface-mount package. This device is characterized by a drain-to-source voltage of 60 V and a continuous drain current of 295 mA at an ambient temperature of 25°C. It offers low on-resistance, with a maximum RDS(on) of 1.6 Ω at a 10 V gate-source voltage and 2.5 Ω at 4.5 V. Key features include a low gate threshold voltage, low input capacitance, and a gate-source ESD rating of 2000 V (HBM). These characteristics make the NTJD5121NT1G suitable for applications such as low-side load switches and DC-DC converters.
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SPECIFICATIONS
FREQUENTLY ASKED QUESTIONS
Is NTJD5121NT1G RoHS compliant?
Yes, NTJD5121NT1G is RoHS compliant.
What is the lead time for NTJD5121NT1G?
The standard lead time for NTJD5121NT1G is approximately 42 weeks. In-stock quantities ship from Master Electronics.
IN STOCK: 150,000
Can Ship immediately
Minimum Order Quantity: 3000
Multiple: 3000
Factory Lead-Time 42 Weeks
Price (USD)
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