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MJ21196G
The MJ21196G is an NPN silicon power transistor designed for high-power audio output, disk head positioners, and linear applications. ...
DESCRIPTION
The MJ21196G is an NPN silicon power transistor that utilizes Perforated Emitter technology for high-power applications. It is rated for a collector-emitter voltage of 250 V and a continuous collector current of 16 A, with a total power dissipation capacity of 250 W. This device features a high DC current gain with a minimum hFE of 25 at an 8 A collector current, ensuring excellent gain linearity and low total harmonic distortion. Due to its high Safe Operating Area (SOA) and robust design, the MJ21196G is ideal for high-fidelity audio amplifiers, disk head positioners, and other demanding linear circuits.
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SPECIFICATIONS
FREQUENTLY ASKED QUESTIONS
Is MJ21196G RoHS compliant?
No, MJ21196G is not RoHS compliant.
What is the lead time for MJ21196G?
The standard lead time for MJ21196G is approximately 34 weeks. In-stock quantities ship from Master Electronics.
IN STOCK: 1,801
Can Ship immediately
On Order:
300
can ship 10/12/26
Minimum Order Quantity: 5
Factory Lead-Time 34 Weeks
Price (USD)
Tools/3D Models
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Datasheet
