注册
CN
English
中文 / 汉语
Deutsch
Español
Nederlands
HGTD1N120BNS9A
Trans IGBT Chip N=-CH 1200V 5.3A 60000mW 3-Pin(2+Tab) DPAK T/R ...
描述
The ONSEMI HGTD1N120BNS9A is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed to deliver exceptional efficiency in a wide range of demanding applications. Featuring a robust 1200V blocking voltage and a low collector-to-emitter saturation voltage, this IGBT is optimized for high-speed switching, making it ideal for use in inverters, motor drives, and power supply systems. The device comes in a TO-263 package, offering excellent thermal performance and ease of integration into compact designs. With its rugged construction and reliable performance, the HGTD1N120BNS9A delivers superior power handling and reliability, ensuring your system operates smoothly under a variety of conditions. Whether you're developing consumer electronics, industrial equipment, or automotive solutions, this IGBT provides the necessary capabilities to enhance your product's performance and efficiency.
搜索关键词: HGTD1N120BNS9A
规格
常见问题
HGTD1N120BNS9A 是否符合 RoHS 标准？
不，HGTD1N120BNS9A 不符合 RoHS 标准。
HGTD1N120BNS9A 的交货期是多少？
HGTD1N120BNS9A 的标准交货期约为 17 周。有库存的数量由 Master Electronics 发货。
数据表