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BSDW20G120C2
Silicon Carbide Shottky Barrier Diode - 20A - Vr: 1200V - Vf: 1.42V - -55°C to 175°C - TO247-3 ...
描述
BSDW20G120C2 is a Silicon Carbide (SiC) Schottky Diode designed for high-efficiency power rectification applications. It features a repetitive peak reverse voltage of 1200 V, average forward current of 20 A, and non-repetitive peak forward surge current of 80 A. The device offers low forward voltage drop (1.6 V typical at 10 A), low reverse leakage current (1 µA typical at 25 °C), and operates over a junction temperature range of -55 °C to +175 °C. With total power dissipation of 272.7 W and thermal resistance of 0.55 °C/W (junction to mounting base, per device), this diode is well-suited for Switched-Mode Power Supplies (SMPS), Power Factor Correction (PFC), PV inverters, DC-DC converters, and motor drives.
搜索关键词: BSDW20G120C2
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常见问题
BSDW20G120C2 是否符合 RoHS 标准？
是的，BSDW20G120C2 符合 RoHS 标准。
BSDW20G120C2 的交货期是多少？
BSDW20G120C2 的标准交货期约为 18 天。有库存的数量由 Master Electronics 发货。
有存货: 3,600
可立即发货
库存数量的起订量: 23
缺货数量的起订量: 23
工厂交货期 18 周
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