NTJD5121NT1G
A dual N-Channel power MOSFET with ESD protection, rated for 60 V and 295 mA in a SC-88 package. ...
DESCRIPCIÓN
The NTJD5121NT1G is a dual N-Channel power MOSFET featuring integrated ESD protection in a compact SC-88 surface-mount package. This device is characterized by a drain-to-source voltage of 60 V and a continuous drain current of 295 mA at an ambient temperature of 25°C. It offers low on-resistance, with a maximum RDS(on) of 1.6 Ω at a 10 V gate-source voltage and 2.5 Ω at 4.5 V. Key features include a low gate threshold voltage, low input capacitance, and a gate-source ESD rating of 2000 V (HBM). These characteristics make the NTJD5121NT1G suitable for applications such as low-side load switches and DC-DC converters.
Palabras clave de búsqueda: NTJD5121NT1G
ESPECIFICACIONES
FREQUENTLY ASKED QUESTIONS
Is NTJD5121NT1G RoHS compliant?
Yes, NTJD5121NT1G is RoHS compliant.
What is the lead time for NTJD5121NT1G?
The standard lead time for NTJD5121NT1G is approximately 42 days. In-stock quantities ship from Master Electronics.
EN STOCK: 150.000
Puede enviar inmediatamente
Cantidad mínima de pedido: 3000
Esta plantilla de mensaje se utiliza para notificar a un afiliado que un pedido determinado fue pagado. El pedido obtiene el estado Pagado cuando se cobra el importe.: 3000
Plazo de entrega de fábrica 42 Semanas
Precio (USD)
Guías de productos
English
中文 / 汉语
Español
