NDT456P

The NDT456P is a -30V, -7.5A P-Channel enhancement mode field effect transistor designed for power management and switching applications. ...

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DESCRIPCIÓN

The NDT456P is a P-Channel enhancement mode power field effect transistor produced using a high cell density DMOS technology for superior switching performance. It is rated for a drain-source voltage of -30V and a continuous drain current of -7.5A. This device features a very low on-state resistance, with an RDS(ON) of 0.030 Î© at VGS = -10V and 0.045 Î© at VGS = -4.5V. Housed in a surface-mount SOT-223 package, it offers high power and current handling capabilities. The NDT456P is particularly suited for low voltage applications such as notebook computer power management, battery-powered circuits, and DC motor control.

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Proveedor:

onsemi

Nº de pieza:

NDT456P

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Por Each

RoHS:

HTS:

8541290095

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ECCN:

EAR99

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