NDT456P
The NDT456P is a -30V, -7.5A P-Channel enhancement mode field effect transistor designed for power management and switching applications. ...
DESCRIPCIÓN
The NDT456P is a P-Channel enhancement mode power field effect transistor produced using a high cell density DMOS technology for superior switching performance. It is rated for a drain-source voltage of -30V and a continuous drain current of -7.5A. This device features a very low on-state resistance, with an RDS(ON) of 0.030 Ω at VGS = -10V and 0.045 Ω at VGS = -4.5V. Housed in a surface-mount SOT-223 package, it offers high power and current handling capabilities. The NDT456P is particularly suited for low voltage applications such as notebook computer power management, battery-powered circuits, and DC motor control.
Palabras clave de búsqueda: NDT456P
ESPECIFICACIONES
PREGUNTAS FRECUENTES
¿Cumple NDT456P con la normativa RoHS?
No, NDT456P no cumple con la normativa RoHS.
¿Cuál es el plazo de entrega de NDT456P?
El plazo de entrega estándar de NDT456P es de aproximadamente 11 días. Las cantidades disponibles se envían desde Master Electronics.
EN STOCK: 8.030
Puede enviar inmediatamente
Cantidad mínima de pedido: 50
Plazo de entrega de fábrica 11 Semanas
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