MJD44H11T4G

onsemi

The MJD44H11T4G is an NPN silicon power transistor rated for 80V and 8A, designed for general purpose power and switching applications. ...

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DESCRIPCIÓN

The MJD44H11T4G is an NPN power transistor designed for general-purpose power and switching applications such as output or driver stages. It supports a collector-emitter voltage of 80V and a continuous collector current of 8A. This device features a low collector-emitter saturation voltage of 1.0V maximum at 8A and a minimum DC current gain (hFE) of 40 at a collector current of 4A. With a typical gain-bandwidth product of 50 MHz and fast switching speeds, it is optimized for efficient performance. Housed in a surface-mount DPAK package, the MJD44H11T4G is ideal for use in switching regulators, converters, and power amplifiers.

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Proveedor:

onsemi

Nº de pieza:

MJD44H11T4G

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HTS:

8541290095

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ECCN:

EAR99

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