MBR2H100SFT3G
onsemiThe MBR2H100SFT3G is a 100 V, 2.0 A surface-mount Schottky power rectifier in a compact SOD-123FL package designed for high-frequency rectification. ...
DESCRIPCIÓN
The MBR2H100SFT3G is a surface-mount Schottky power rectifier that utilizes a metal-to-silicon power diode design. It features a low forward voltage, a peak repetitive reverse voltage of 100 V, and an average rectified forward current of 2.0 A. This device is capable of operating with a high junction temperature of 175°C and is housed in a compact SOD-123FL package optimized for automated assembly. It is ideally suited for low voltage, high-frequency applications such as AC-DC and DC-DC converters, reverse battery protection, and as a freewheeling or polarity protection diode in portable and battery-powered products.
Palabras clave de búsqueda: MBR2H100SFT3G
ESPECIFICACIÓN
EN STOCK: 9.750
Puede enviar inmediatamente
A la orden:
20.000
puede enviar 6/17/26
Cantidad mínima de pedido: 250
Plazo de entrega de fábrica 43 Semanas
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