MBR2H100SFT3G
The MBR2H100SFT3G is a 100 V, 2.0 A surface-mount Schottky power rectifier in a compact SOD-123FL package designed for high-frequency rectification. ...
DESCRIPCIÓN
The MBR2H100SFT3G is a surface-mount Schottky power rectifier that utilizes a metal-to-silicon power diode design. It features a low forward voltage, a peak repetitive reverse voltage of 100 V, and an average rectified forward current of 2.0 A. This device is capable of operating with a high junction temperature of 175°C and is housed in a compact SOD-123FL package optimized for automated assembly. It is ideally suited for low voltage, high-frequency applications such as AC-DC and DC-DC converters, reverse battery protection, and as a freewheeling or polarity protection diode in portable and battery-powered products.
Palabras clave de búsqueda: MBR2H100SFT3G
ESPECIFICACIONES
PREGUNTAS FRECUENTES
¿Cumple MBR2H100SFT3G con la normativa RoHS?
No, MBR2H100SFT3G no cumple con la normativa RoHS.
¿Cuál es el plazo de entrega de MBR2H100SFT3G?
El plazo de entrega estándar de MBR2H100SFT3G es de aproximadamente 43 días. Las cantidades disponibles se envían desde Master Electronics.
EN STOCK: 21.534
Puede enviar inmediatamente
Cantidad mínima de pedido: 250
Plazo de entrega de fábrica 43 Semanas
Precio (USD)
Guías de productos
English
中文 / 汉语
Deutsch
Español
Nederlands
