HGTG11N120CND
Trans IGBT Chip N-CH 1200V 43A 298000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 1200V 43A 298W TO247 ...
DESCRIPCIÓN
Introducing the ON Semiconductor HGTG11N120CND, a robust and high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This advanced IGBT combines low conduction and switching losses, making it an ideal choice for high-efficiency power conversion systems. With a voltage rating of 1200V and a current rating of 24A, the HGTG11N120CND is well-suited for use in induction heating, motor drives, and solar inverters. The HGTG11N120CND is built with a co-packaged ultrafast diode, enhancing its switching performance and contributing to reduced electromagnetic interference. Its rugged construction ensures reliability and longevity, even in challenging environments. This IGBT also features a low saturation voltage, which minimizes power dissipation and improves overall system efficiency.Engineered for ease of use, the HGTG11N120CND makes integration straightforward with its compatibility with common driver circuits. Whether you are upgrading existing systems or designing new projects, this ON Semiconductor IGBT is a dependable solution for ensuring optimal performance and reliability in your power management applications. Explore the potential of the HGTG11N120CND to elevate your designs today.
Palabras clave de búsqueda: HGTG11N120CND
ESPECIFICACIONES
PREGUNTAS FRECUENTES
¿Cumple HGTG11N120CND con la normativa RoHS?
No, HGTG11N120CND no cumple con la normativa RoHS.
¿Cuál es el plazo de entrega de HGTG11N120CND?
El plazo de entrega estándar de HGTG11N120CND es de aproximadamente 25 semanas. Las cantidades disponibles se envían desde Master Electronics.
EN STOCK: 330
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Cantidad mínima de pedido: 30
Esta plantilla de mensaje se utiliza para notificar a un afiliado que un pedido determinado fue pagado. El pedido obtiene el estado Pagado cuando se cobra el importe.: 30
Plazo de entrega de fábrica 25 Semanas
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