FGH60N60SMD
onsemiThe FGH60N60SMD is a 600V, 60A Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-current switching applications. ...
DESCRIPCIÓN
The FGH60N60SMD is a second-generation Field Stop IGBT that offers optimum performance by utilizing novel field stop technology. It is rated for a collector-emitter voltage of 600V and a continuous collector current of 60A at 100°C. Key features include a high maximum junction temperature of 175°C, a low typical saturation voltage of 1.9V at 60A, and fast switching characteristics which minimize losses. Its positive temperature coefficient allows for easy parallel operation, making it a robust choice for high-power designs. This IGBT is ideal for applications requiring low conduction and switching losses, such as solar inverters, uninterruptible power supplies (UPS), welders, and energy storage systems (ESS).
Palabras clave de búsqueda: FGH60N60SMD
ESPECIFICACIÓN
EN STOCK: 2.220
Puede enviar inmediatamente
Cantidad mínima de pedido: 30
Múltiple: 30
Plazo de entrega de fábrica 13 Semanas
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