DESCRIPCIÓN

The FDG6317NZ is a dual N-Channel POWERTRENCH MOSFET specifically designed to enhance the efficiency of DC/DC converters. It features a very low on-resistance (RDS(ON)) of 400 mΩ at a gate-source voltage of 4.5 V and 550 mΩ at 2.5 V. This device utilizes high-performance trench technology to achieve an extremely low RDS(ON) and low gate charge (QG) in a compact SC70-6 package, with a Gate-Source Zener for ESD ruggedness. Common applications include DC/DC converters, power management, and load switches where high efficiency and a small footprint are critical.