FDG1024NZ
onsemiThe FDG1024NZ is a 20 V, 1.2 A dual N-Channel PowerTrench® MOSFET housed in a compact SC70-6 package. ...
DESCRIPCIÓN
The FDG1024NZ is a dual N-Channel logic level enhancement mode field-effect transistor produced using a high-density DMOS process. It features a low on-state resistance, with a maximum rDS(on) of 175 mΩ at a gate-source voltage of 4.5 V. With a very low gate threshold voltage (VGS(th) < 1 V), the device supports low-level gate drive requirements, enabling operation in 1.5 V circuits. Housed in a very small SC70-6 package, this MOSFET is designed for low-voltage applications as an efficient replacement for bipolar digital transistors and small-signal MOSFETs.
Palabras clave de búsqueda: FDG1024NZ
ESPECIFICACIÓN
EN STOCK: 0
A la orden:
54.000
puede enviar 5/25/26
Cantidad mínima de pedido: 3000
Múltiple: 3000
Este producto no está en stock y no se puede hacer un pedido pendiente.</br>Ver alternativa a continuación
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