BD679AS
onsemiThe BD679AS is an NPN epitaxial silicon Darlington transistor designed for medium power linear and switching applications. ...
DESCRIPCIÓN
The BD679AS is a medium power NPN Darlington transistor in a TO-126 package. It features a collector-emitter voltage of 80V and a continuous collector current rating of 4A, with a peak capability of 6A. This device offers a high DC current gain of at least 750 and a total power dissipation of 40W at a 25°C case temperature. Its characteristics make it suitable for a variety of medium power linear and switching applications, such as amplifier stages and power control circuits.
Palabras clave de búsqueda: BD679AS
ESPECIFICACIÓN
EN STOCK: 7.400
Puede enviar inmediatamente
Stock del fabricante: 10.000 puede enviar 5/29/26
Cantidad mínima de pedido: 100
Plazo de entrega de fábrica 14 Semanas puede enviar 8/24/26
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