BAS40LT1G
onsemiThe BAS40LT1G is a Schottky barrier diode designed for high-speed switching, circuit protection, and voltage clamping applications. ...
DESCRIPCIÓN
The BAS40LT1G is a Schottky barrier diode intended for high-speed switching, circuit protection, and voltage clamping. It features a reverse voltage of 40 V and an extremely low forward voltage, such as 380 mV at 1.0 mA, which reduces conduction loss. Key characteristics include a low total capacitance of 5.0 pF and a maximum reverse leakage current of 1.0 µA at 25 V. Housed in a miniature SOT-23 surface-mount package, this diode is excellent for space-limited handheld and portable applications.
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ESPECIFICACIÓN
EN STOCK: 306.000
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Cantidad mínima de pedido: 3000
Múltiple: 3000
Plazo de entrega de fábrica 43 Semanas
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