APT50GN60BDQ3G
The APT50GN60BDQ3G is a 600V Field Stop Trench Gate IGBT designed for low-frequency applications requiring minimal conduction loss. ...
DESCRIPCIÓN
The APT50GN60BDQ3G is a 600V Insulated Gate Bipolar Transistor (IGBT) that utilizes advanced Field Stop and Trench Gate technologies for ultra-low VCE(ON). It features a continuous collector current of 107A at 25°C, a total power dissipation of 366W, and is rated for a maximum junction temperature of 175°C. The device offers a 6µs short circuit capability, while low gate charge and tight parameter distribution simplify gate drive design and enable easy paralleling. Its characteristics make it ideal for low-frequency power applications such as welding, inductive heating, solar inverters, motor drives, and uninterruptible power supplies (UPS).
Palabras clave de búsqueda: APT50GN60BDQ3G
ESPECIFICACIONES
PREGUNTAS FRECUENTES
¿Cumple APT50GN60BDQ3G con la normativa RoHS?
Sí, APT50GN60BDQ3G cumple con la normativa RoHS.
¿Cuál es el plazo de entrega de APT50GN60BDQ3G?
El plazo de entrega estándar de APT50GN60BDQ3G es de aproximadamente 26 días. Las cantidades disponibles se envían desde Master Electronics.
EN STOCK: 0
Cantidad mínima de pedido: 5
Plazo de entrega de fábrica 26 Semanas
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