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BIDW30N60T
BournsIGBT Discrete 600V - 30A - TO-247 - -55°C to +150°C ...
DESCRIPCIÓN
BIDW30N60T is an N-channel Insulated Gate Bipolar Transistor (IGBT) that combines MOS gate and bipolar transistor technology for high voltage and high current applications. It features advanced trench-gate field-stop technology providing low collector-emitter saturation voltage (VCE(sat) typ. 1.65 V at 30 A) and reduced switching losses. The device offers a collector-emitter voltage rating of 600 V, continuous collector current of 30 A at 100°C, and total power dissipation of 230 W. With fast switching characteristics including turn-on delay time of 30 ns and turn-off delay time of 67 ns, it is well-suited for switch-mode power supplies (SMPS), uninterruptible power sources (UPS), power factor correction (PFC), and induction heating applications.
Palabras clave de búsqueda: BIDW30N60T
ESPECIFICACIÓN
EN STOCK: 3.000
Puede enviar inmediatamente
MOQ para Cantidad en Stock: 56
MOQ para cantidad agotada: 56
Plazo de entrega de fábrica 16 Semanas
FICHA TÉCNICA
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