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BIDW20N60T
BournsIGBT Discrete 600V - 20A - TO-247 - -55°C to +150°C ...
DESCRIPCIÓN
BIDW20N60T is an N-channel Insulated Gate Bipolar Transistor (IGBT) that combines MOS gate and bipolar transistor technology for high voltage and high current applications. It features advanced trench-gate field-stop technology providing a collector-emitter voltage of 600 V, continuous collector current of 20 A, and low collector-emitter saturation voltage (VCE(sat)) of 1.7 V typical at 25°C. The device offers total power dissipation of 192 W, low switching losses with turn-on energy of 1 mJ and turn-off energy of 0.3 mJ, and operates over a junction temperature range of -55°C to +150°C. Common applications include switch-mode power supplies (SMPS), uninterruptible power sources (UPS), power factor correction (PFC), and stepper motor drives where optimized conduction and low switching losses are essential.
Palabras clave de búsqueda: BIDW20N60T
ESPECIFICACIÓN
EN STOCK: 4.195
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MOQ para Cantidad en Stock: 69
MOQ para cantidad agotada: 69
Plazo de entrega de fábrica 16 Semanas
FICHA TÉCNICA
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