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QRD1114
onsemiThe QRD1114 is a reflective object sensor that integrates an infrared emitting diode and an NPN silicon phototransistor for non-contact surface sensing. ...
DESCRIPCIÓN
The QRD1114 is a reflective object sensor that consists of an infrared emitting diode and an NPN silicon phototransistor mounted side-by-side in a compact black plastic housing. The emitter has a peak emission wavelength of 940 nm, and the sensor features a collector-emitter breakdown voltage of at least 30V. It provides a minimum on-state collector current of 1 mA when a reflective surface is 0.050 inches away, with a typical rise time of 10 µs. Unfocused for sensing diffused surfaces and featuring a daylight filter, the QRD1114 is ideal for applications such as no-contact surface sensing, edge detection, and presence detection.
Palabras clave de búsqueda: QRD1114
ESPECIFICACIÓN
EN STOCK: 2.000
Puede enviar inmediatamente
Cantidad mínima de pedido: 100
Múltiple: 100
Plazo de entrega de fábrica 17 Semanas
FICHA TÉCNICA
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