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QEE123
onsemiThe QEE123 is an 880 nm AlGaAs infrared light-emitting diode (LED) encapsulated in a plastic sidelooker package. ...
DESCRIPCIÓN
The QEE123 is an 880 nm AlGaAs infrared light-emitting diode designed for high output power in a sidelooker package. It delivers a typical radiant intensity of 9 mW/sr at a 100 mA forward current, with a medium wide emission angle of 50 degrees. Key electrical characteristics include a maximum forward voltage of 1.7 V, a typical rise time of 900 ns, and a fall time of 800 ns. This Pb-free device is rated for an operating temperature range of -40°C to +100°C. Its high output power and compatibility with the QSE113 photosensor make it suitable for various infrared sensing and data communication applications.
Palabras clave de búsqueda: QEE123
ESPECIFICACIÓN
EN STOCK: 1.500
Puede enviar inmediatamente
Cantidad mínima de pedido: 500
Múltiple: 500
Plazo de entrega de fábrica 11 Semanas
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