MJD44H11T4G
The MJD44H11T4G is an NPN silicon power transistor rated for 80V and 8A, designed for general purpose power and switching applications. ...
DESCRIPCIÓN
The MJD44H11T4G is an NPN power transistor designed for general-purpose power and switching applications such as output or driver stages. It supports a collector-emitter voltage of 80V and a continuous collector current of 8A. This device features a low collector-emitter saturation voltage of 1.0V maximum at 8A and a minimum DC current gain (hFE) of 40 at a collector current of 4A. With a typical gain-bandwidth product of 50 MHz and fast switching speeds, it is optimized for efficient performance. Housed in a surface-mount DPAK package, the MJD44H11T4G is ideal for use in switching regulators, converters, and power amplifiers.
Palabras clave de búsqueda: MJD44H11T4G
ESPECIFICACIONES
PREGUNTAS FRECUENTES
¿Cumple MJD44H11T4G con la normativa RoHS?
No, MJD44H11T4G no cumple con la normativa RoHS.
¿Cuál es el plazo de entrega de MJD44H11T4G?
El plazo de entrega estándar de MJD44H11T4G es de aproximadamente 12 días. Las cantidades disponibles se envían desde Master Electronics.
EN STOCK: 33.900
Envío today, Introduzca el valor de la configuración.
Cantidad mínima de pedido: 100
Plazo de entrega de fábrica 12 Semanas
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