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1N5819G
onsemiThe 1N5819G is a 1.0 Ampere, 40 Volt axial-lead Schottky barrier rectifier designed for high-efficiency, low-voltage applications. ...
DESCRIPCIÓN
The 1N5819G is a 1.0 Ampere Schottky barrier rectifier utilizing a metal-to-silicon power diode design for high efficiency. It is rated for a peak repetitive reverse voltage of 40 V and an average rectified forward current of 1.0 A. Key electrical characteristics include a low maximum forward voltage of 0.6 V at 1.0 A and a maximum instantaneous reverse current of 1.0 mA at 25°C. Due to its low stored charge, majority carrier conduction, and low power loss, this device is ideally suited for use as a rectifier in low-voltage, high-frequency inverters, free-wheeling diodes, and polarity protection applications.
Palabras clave de búsqueda: 1N5819G
ESPECIFICACIÓN
EN STOCK: 4.000
Puede enviar inmediatamente
Cantidad mínima de pedido: 1000
Múltiple: 1000
Plazo de entrega de fábrica 21 Semanas
FICHA TÉCNICA
