MSC050SDA120BCT
Microchip TechnologyDiode - SiC (Silicon Carbide) Schottky - 1200V - 109A - 1.8 V @ 50 A Forward (Vf) (Max)@If - No Recovery Time > 500mA (Io) - TO-247-3 Package.
DESCRIPCIÓN
The MSC050SDA120BCT silicon carbide (SiC) power Schottky barrier diode (SBD) increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. Operating temperature range is from -55°C to 175°
Palabras clave de búsqueda: MSC050SDA120BCT
ESPECIFICACIÓN
EN STOCK: 0
Stock del fabricante: 23 puede enviar 5/29/26
MOQ para cantidad agotada: 8
Plazo de entrega de fábrica 8 Semanas puede enviar 7/13/26
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