BIDW30N60T
IGBT Discrete 600V - 30A - TO-247 - -55°C to +150°C ...
DESCRIPCIÓN
BIDW30N60T is an N-channel Insulated Gate Bipolar Transistor (IGBT) that combines MOS gate and bipolar transistor technology for high voltage and high current applications. It features advanced trench-gate field-stop technology providing low collector-emitter saturation voltage (VCE(sat) typ. 1.65 V at 30 A) and reduced switching losses. The device offers a collector-emitter voltage rating of 600 V, continuous collector current of 30 A at 100°C, and total power dissipation of 230 W. With fast switching characteristics including turn-on delay time of 30 ns and turn-off delay time of 67 ns, it is well-suited for switch-mode power supplies (SMPS), uninterruptible power sources (UPS), power factor correction (PFC), and induction heating applications.
Palabras clave de búsqueda: BIDW30N60T
ESPECIFICACIONES
PREGUNTAS FRECUENTES
¿Cumple BIDW30N60T con la normativa RoHS?
Sí, BIDW30N60T cumple con la normativa RoHS.
¿Cuál es el plazo de entrega de BIDW30N60T?
El plazo de entrega estándar de BIDW30N60T es de aproximadamente 16 días. Las cantidades disponibles se envían desde Master Electronics.
EN STOCK: 2.199
Puede enviar inmediatamente
Cantidad mínima de pedido: 56
Plazo de entrega de fábrica 16 Semanas
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