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BIDNW30N60H3
IGBT Discrete 600V - 30A - TO-247N - -55°C to +150°C ...
DESCRIPCIÓN
BIDNW30N60H3 is a 600 V, 30 A Insulated Gate Bipolar Transistor (IGBT) that combines MOS gate and bipolar transistor technology for optimized high-voltage and high-current switching performance. The device employs advanced trench-gate field-stop technology, which provides superior control of dynamic characteristics, resulting in a low collector-emitter saturation voltage (VCE(sat)) of 1.65 V typical at 30 A and 25°C, and reduced switching losses with fast switching response. Key electrical characteristics include a gate-threshold voltage of 4.0–6.5 V, turn-on delay time of 30 ns, and total switching energy of 2.3 mJ, making it well-suited for demanding applications such as switch-mode power supplies (SMPS), uninterruptible power sources (UPS), power factor correction (PFC), and induction heating systems.
Palabras clave de búsqueda: BIDNW30N60H3
ESPECIFICACIONES
PREGUNTAS FRECUENTES
¿Cumple BIDNW30N60H3 con la normativa RoHS?
Sí, BIDNW30N60H3 cumple con la normativa RoHS.
¿Cuál es el plazo de entrega de BIDNW30N60H3?
El plazo de entrega estándar de BIDNW30N60H3 es de aproximadamente 16 días. Las cantidades disponibles se envían desde Master Electronics.
EN STOCK: 1.338
Puede enviar inmediatamente
MOQ para Cantidad en Stock: 62
MOQ para cantidad agotada: 62
Plazo de entrega de fábrica 16 Semanas
Hoja de datos
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